FQB27N25TM-F085
Sanyo Semiconductor/onsemi
Copyright@2026 All Rights Reserved
粤ICP备19162589号
Technical Support Cluster Technology
Friend links
Sitemap
IXTA1N200P3HV
Part Number：
IXTA1N200P3HV
Category：
Single FETs, MOSFETs
Manufacturer：
Littelfuse / IXYS RF
Description：
MOSFET N-CH 2000V 1A TO263
Packaging：
Tube
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Mounting Type Surface Mount
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Vgs (Max) ±20V
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Operating Temperature -55°C ~ 150°C (TJ)
- Vgs(th) (Max) @ Id 4V @ 250µA
- Package / Case TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Power Dissipation (Max) 125W (Tc)
- Current - Continuous Drain (Id) @ 25°C 1A (Tc)
- Supplier Device Package TO-263AA
- Gate Charge (Qg) (Max) @ Vgs 23.5 nC @ 10 V
- Drain to Source Voltage (Vdss) 2000 V
- Rds On (Max) @ Id, Vgs 40Ohm @ 500mA, 10V
- Input Capacitance (Ciss) (Max) @ Vds 646 pF @ 25 V
