FPF1C2P5BF07A
Sanyo Semiconductor/onsemi
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Technical Support Cluster Technology
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Specifications
- Mounting Type Chassis Mount
- Operating Temperature 150°C (TJ)
- Supplier Device Package Module
- Technology Silicon Carbide (SiC)
- Configuration 2 N-Channel (Half Bridge)
- Drain to Source Voltage (Vdss) 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C 423A (Tc)
- Gate Charge (Qg) (Max) @ Vgs 1025nC @ 20V
- Package / Case Module, Screw Terminals
- Rds On (Max) @ Id, Vgs 5.7mOhm @ 300A, 20V
- Vgs(th) (Max) @ Id 2.3V @ 15mA (Typ)
- Input Capacitance (Ciss) (Max) @ Vds 19500pF @ 800V
- Power - Max 1660W
