FPF1C2P5BF07A
Sanyo Semiconductor/onsemi
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Technical Support Cluster Technology
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Specifications
- Mounting Type Chassis Mount
- Package / Case Module
- Operating Temperature -40°C ~ 150°C (TJ)
- Supplier Device Package Module
- Technology Silicon Carbide (SiC)
- Configuration 2 N-Channel (Half Bridge)
- Drain to Source Voltage (Vdss) 1200V (1.2kV)
- Power - Max 925W
- Current - Continuous Drain (Id) @ 25°C 193A (Tc)
- Rds On (Max) @ Id, Vgs 16mOhm @ 120A, 20V
- Vgs(th) (Max) @ Id 2.6V @ 6mA (Typ)
- Gate Charge (Qg) (Max) @ Vgs 378nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds 6470pF @ 800V
