FPF1C2P5BF07A
Sanyo Semiconductor/onsemi
Copyright@2026 All Rights Reserved
粤ICP备19162589号
Technical Support Cluster Technology
Friend links
Sitemap
BSM180D12P2C101
Part Number：
BSM180D12P2C101
Category：
FET, MOSFET Arrays
Manufacturer：
ROHM Semiconductor
Description：
SIC 2N-CH 1200V 204A MODULE
Packaging：
Bulk
ROHS Status:
Yes
Currency:
USD
Specifications
- Package / Case Module
- Operating Temperature -40°C ~ 150°C (TJ)
- Supplier Device Package Module
- Technology Silicon Carbide (SiC)
- Configuration 2 N-Channel (Half Bridge)
- Drain to Source Voltage (Vdss) 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C 204A (Tc)
- Vgs(th) (Max) @ Id 4V @ 35.2mA
- Input Capacitance (Ciss) (Max) @ Vds 23000pF @ 10V
- Power - Max 1130W
